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IRF614SPBF

IRF614SPBF

IRF614SPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 2 Ω @ 1.6A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

IRF614SPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 36W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3.1W
Case Connection DRAIN
Turn On Delay Time7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time7.6ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 2.7A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 2Ohm
DS Breakdown Voltage-Min 250V
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3655 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.988080$5.98808
10$5.649132$56.49132
100$5.329370$532.937
500$5.027707$2513.8535
1000$4.743120$4743.12

IRF614SPBF Product Details

IRF614SPBF Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 140pF @ 25V.This device has a continuous drain current (ID) of [2.7A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 16 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRF614SPBF Features


a continuous drain current (ID) of 2.7A
the turn-off delay time is 16 ns
a 250V drain to source voltage (Vdss)


IRF614SPBF Applications


There are a lot of Vishay Siliconix
IRF614SPBF applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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