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IXTT30N50L2

IXTT30N50L2

IXTT30N50L2

IXYS

IXYS SEMICONDUCTOR IXTT30N50L2 MOSFET Transistor, LINEAR L2, N Channel, 30 A, 500 V, 200 mohm, 10 V, 2.5 V

SOT-23

IXTT30N50L2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2006
Series Linear L2™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish PURE TIN
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max 400W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation400W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 30A
Threshold Voltage 2.5V
Drain-source On Resistance-Max 0.2Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 1500 mJ
Nominal Vgs 2.5 V
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:402 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$12.21000$12.21
30$10.26767$308.0301
120$9.43500$1132.2
510$8.04751$4104.2301

About IXTT30N50L2

The IXTT30N50L2 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features IXYS SEMICONDUCTOR IXTT30N50L2 MOSFET Transistor, LINEAR L2, N Channel, 30 A, 500 V, 200 mohm, 10 V, 2.5 V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTT30N50L2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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