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VS-GB100TP120U

VS-GB100TP120U

VS-GB100TP120U

Vishay Semiconductor Diodes Division

Output & SW Modules - IAP IGBT

SOT-23

VS-GB100TP120U Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case INT-A-Pak
Published 2015
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish NICKEL (197)
Max Power Dissipation735W
Configuration Half Bridge
Power - Max 735W
Input Standard
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 150A
Current - Collector Cutoff (Max) 2mA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance4.3nF
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 100A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 4.3nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:4462 items

About VS-GB100TP120U

The VS-GB100TP120U from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features Output & SW Modules - IAP IGBT.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-GB100TP120U, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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