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BSM50GP60BOSA1

  • BSM50GP60BOSA1 - BSM50GP60BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
  • BSM50GP60BOSA1 - BSM50GP60BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

BSM50GP60BOSA1

BSM50GP60BOSA1

Infineon Technologies

BSM50GP60BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM50GP60BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~125°C
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 24
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count24
JESD-30 Code R-XUFM-X24
Qualification StatusNot Qualified
Number of Elements 7
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Current - Collector Cutoff (Max) 500μA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 70A
Turn On Time105 ns
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 25A
Turn Off Time-Nom (toff) 315 ns
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 1.1nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:1620 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$107.44500$1074.45

BSM50GP60BOSA1 Product Details

BSM50GP60BOSA1 Description


The BSM50GP60BOSA1 is a Full Bridge 600 V 70 A 250 W IGBT Module.



BSM50GP60BOSA1 Features


  • Vce(on) (Max) @ Vge, Ic--2.75V @ 15V, 25A

  • Current - Collector Cutoff (Max)--500 μA

  • Input Capacitance (Cies) @ Vce--1.1 nF @ 25 V

  • Input--Three Phase Bridge Rectifier

  • Operating Temperature -40°C ~ 125°C



BSM50GP60BOSA1 Applications


  • Drives


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