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VS-8ETH03-1-M3

VS-8ETH03-1-M3

VS-8ETH03-1-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 8A TO262AA

SOT-23

VS-8ETH03-1-M3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262AA
Series FRED Pt®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 20μA @ 300V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 8A
Operating Temperature - Junction -65°C~175°C
Voltage - DC Reverse (Vr) (Max) 300V
Current - Average Rectified (Io) 8A
Reverse Recovery Time 35ns
RoHS StatusROHS3 Compliant
In-Stock:6177 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.060437$1.060437
10$1.000413$10.00413
100$0.943785$94.3785
500$0.890364$445.182
1000$0.839966$839.966

About VS-8ETH03-1-M3

The VS-8ETH03-1-M3 from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 300V 8A TO262AA.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-8ETH03-1-M3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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