Name: 30CTQ035S
Brand: Vishay Semiconductor Diodes Division
SKU: 30CTQ035S
Price: 0.57000 USD
Availability: InStock

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30CTQ035S

Manufacturer part number:30CTQ035S

Manufacturer:Vishay Semiconductor Diodes Division

Description:30CTQ035S datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

Case Package:SOT-23

Datasheet:30CTQ035S Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Diode Element Material	SILICON
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	FREE WHEELING DIODE
Capacitance	900pF
Voltage - Rated DC	35V
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Current Rating	30A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	30CTQ035S
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	2
Element Configuration	Common Cathode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Schottky
Current - Reverse Leakage @ Vr	2mA @ 35V
Voltage - Forward (Vf) (Max) @ If	620mV @ 15A
Max Reverse Leakage Current	2mA
Operating Temperature - Junction	-55°C~175°C
Max Surge Current	1.06kA
Application	GENERAL PURPOSE
Forward Voltage	620mV
Max Reverse Voltage (DC)	35V
Average Rectified Current	15A
Number of Phases	1
Non-rep Pk Forward Current-Max	265A
Diode Configuration	1 Pair Common Cathode
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

30CTQ035S Product Details

30CTQ035S Overview

This device will operate when the forward voltage is set to 620mV.In order to prevent the surge current from exceeding 1.06kA, it should be monitored.Parts can be powered by currents of 30A.There are approximately 900pF farads of capacitance in this device.As a reverse biased semiconductor device, its maximal reverse leakage current is 2mA.