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TPH4R10ANL,L1Q

TPH4R10ANL,L1Q

TPH4R10ANL,L1Q

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

SOT-23

TPH4R10ANL,L1Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Operating Temperature150°C
PackagingTape & Reel (TR)
Series U-MOSVIII-H
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 67W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.1m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6.3nF @ 50V
Current - Continuous Drain (Id) @ 25°C 92A Ta 70A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusRoHS Compliant
In-Stock:10540 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About TPH4R10ANL,L1Q

The TPH4R10ANL,L1Q from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features X35 PB-F POWER MOSFET TRANSISTOR.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TPH4R10ANL,L1Q, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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