Name: NDT3055L
Brand: ON Semiconductor
SKU: NDT3055L
Price: 0.94000 USD
Availability: InStock

new-10%

NDT3055L

Manufacturer part number:NDT3055L

Manufacturer:ON Semiconductor

Description:NDT3055L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NDT3055L Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	100mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	3.5A
Number of Elements	1
Voltage	40V
Power Dissipation-Max	3W Ta
Element Configuration	Single
Current	32A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	345pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	7.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	4A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Dual Supply Voltage	60V
Nominal Vgs	1.6 V
Height	1.6mm
Length	6.5mm
Width	6.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NDT3055L Product Details

NDT3055L Description

The NDT3055L is an N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This extremely high-density technology has been specifically designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes. The onsemi NDT3055L is particularly suited for low voltage applications such as DC/DC converters, PWM motor controls, and other battery-powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDT3055L Features

In SOT-223-4 package
4 A, 60 V. RDS(ON)= 0.100 W @ VGS = 10 V,

RDS(ON)= 0.120 W @ VGS = 4.5 V.

Low drive requirements allow operation directly from logic drivers. VGS(TH) < 2V.
High-density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.

NDT3055L Applications

DC motor control
DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed
Power Management
Motor Drive & Control
Automotive