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TPH3R203NL,L1Q
Toshiba Semiconductor and Storage
N-Channel Tape & Reel (TR) 3.2m Ω @ 23.5A, 10V ±20V 2100pF @ 15V 21nC @ 10V 8-PowerVDFN
SOT-23
TPH3R203NL,L1Q Datasheet PDF
non-compliant
| Parameter Name | Value |
|---|---|
| Type | Parameter |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Weight | 850.995985mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | U-MOSVIII-H |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| JESD-30 Code | S-PDSO-F5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.6W Ta 44W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 24 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.2m Ω @ 23.5A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 300μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2100pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 47A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Rise Time | 4.4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5.7 ns |
| Turn-Off Delay Time | 11.5 ns |
| Continuous Drain Current (ID) | 47A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 60A |
| Drain-source On Resistance-Max | 0.0047Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 200A |
| Avalanche Energy Rating (Eas) | 94 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Quantity | Unit Price | Ext. Price |
| 1 | $1.585166 | $1.585166 |
| 10 | $1.495440 | $14.9544 |
| 100 | $1.410792 | $141.0792 |
| 500 | $1.330936 | $665.468 |
| 1000 | $1.255600 | $1255.6 |
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