Name: STB45N40DM2AG
Brand: STMicroelectronics
SKU: STB45N40DM2AG
Price: 7.29000 USD
Availability: InStock

new-10%

STB45N40DM2AG

Manufacturer part number:STB45N40DM2AG

Manufacturer:STMicroelectronics

Description:STB45N40DM2AG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB45N40DM2AG Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, MDmesh™ DM2
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STB45N
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	72m Ω @ 19A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 100V
Current - Continuous Drain (Id) @ 25°C	38A Tc
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Drain to Source Voltage (Vdss)	400V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Continuous Drain Current (ID)	38A
Drain-source On Resistance-Max	0.072Ohm
Pulsed Drain Current-Max (IDM)	110A
DS Breakdown Voltage-Min	400V
Avalanche Energy Rating (Eas)	1100 mJ
RoHS Status	ROHS3 Compliant

STB45N40DM2AG Product Details

STB45N40DM2AG Description

This high-voltage N-channel Power MOSFET is part of the MDmesh? DM2 fast recovery diode series. It offers a very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.