TK39J60W,S1VQ Overview
A device's maximum input capacitance is 4100pF @ 300V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 38.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
TK39J60W,S1VQ Features
a continuous drain current (ID) of 38.8A
a drain-to-source breakdown voltage of 600V voltage
TK39J60W,S1VQ Applications
There are a lot of Toshiba Semiconductor and Storage
TK39J60W,S1VQ applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
