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IXFN50N120SIC

IXFN50N120SIC

IXFN50N120SIC

IXYS

MOSFET N-CH

SOT-23

IXFN50N120SIC Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Operating Temperature-40°C~150°C TJ
PackagingTube
Published 2016
Part StatusActive
Technology SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 40A, 20V
Vgs(th) (Max) @ Id 2.2V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +20V, -5V
In-Stock:159 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$599.823773$599.823773
10$565.871484$5658.71484
100$533.841023$53384.1023
500$503.623606$251811.803
1000$475.116610$475116.61

About IXFN50N120SIC

The IXFN50N120SIC from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFN50N120SIC, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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