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RN2115MFV,L3F

RN2115MFV,L3F

RN2115MFV,L3F

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor

SOT-23

RN2115MFV,L3F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-723
PackagingTape & Reel (TR)
Published 2016
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 150mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS StatusRoHS Compliant
In-Stock:261504 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About RN2115MFV,L3F

The RN2115MFV,L3F from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN2115MFV,L3F, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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