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DDTC113TE-7

DDTC113TE-7

DDTC113TE-7

Diodes Incorporated

Bipolar Transistors - Pre-Biased 150MW 1KW

SOT-23

DDTC113TE-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e0
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Additional FeatureBUILT-IN BIAS RESISTOR
HTS Code8541.21.00.75
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 10
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Polarity/Channel Type NPN
Transition Frequency 250MHz
Collector Current-Max (IC) 0.1A
DC Current Gain-Min (hFE) 100
Collector-Emitter Voltage-Max 50V
RoHS StatusROHS3 Compliant
In-Stock:65959 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About DDTC113TE-7

The DDTC113TE-7 from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features Bipolar Transistors - Pre-Biased 150MW 1KW.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DDTC113TE-7, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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