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RN1110,LF(CT

RN1110,LF(CT

RN1110,LF(CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

SOT-23

RN1110,LF(CT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SSM
PackagingTape & Reel (TR)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation100mW
Power - Max 100mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7 kOhms
RoHS StatusRoHS Compliant
In-Stock:170493 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About RN1110,LF(CT

The RN1110,LF(CT from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS PREBIAS NPN 50V 0.1A SSM.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN1110,LF(CT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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