RN1106MFV,L3F(CT datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
RN1106MFV,L3F(CT Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mounting Type
Surface Mount
Package / Case
SOT-723
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
150mW
Transistor Type
NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 5mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
100mA
Resistor - Base (R1)
4.7 k Ω
Resistor - Emitter Base (R2)
47 k Ω
In-Stock:45828 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.18000
$0.18
500
$0.1782
$89.1
1000
$0.1764
$176.4
1500
$0.1746
$261.9
2000
$0.1728
$345.6
2500
$0.171
$427.5
RN1106MFV,L3F(CT Product Details
RN1106MFV,L3F(CT Applications
Ultra-small package, suited to very high-density mounting
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and lowering
assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN2101MFV to RN2106MFV
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