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RN1106MFV,L3F

RN1106MFV,L3F

RN1106MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN

SOT-23

RN1106MFV,L3F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM
PackagingTape & Reel (TR)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 150mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
RoHS StatusRoHS Compliant
In-Stock:36163 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.158727$0.158727
10$0.149742$1.49742
100$0.141266$14.1266
500$0.133270$66.635
1000$0.125726$125.726

About RN1106MFV,L3F

The RN1106MFV,L3F from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS PREBIAS NPN.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN1106MFV,L3F, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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