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RFM12U7X(TE12L,Q)

RFM12U7X(TE12L,Q)

RFM12U7X(TE12L,Q)

Toshiba Semiconductor and Storage

RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 4A 20W 20V

SOT-23

RFM12U7X(TE12L,Q) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case TO-271AA
PackagingCut Tape (CT)
Published 2009
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation20W
Reach Compliance Code unknown
Current Rating4A
Frequency 520MHz
Current - Test 750mA
Drain to Source Voltage (Vdss) 20V
Transistor Type N-Channel
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 10V
Gain 10.8dB
Power - Output 12W
Voltage - Test 7.2V
RoHS StatusRoHS Compliant
In-Stock:4364 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.420701$2.420701
10$2.283680$22.8368
100$2.154415$215.4415
500$2.032467$1016.2335
1000$1.917422$1917.422

About RFM12U7X(TE12L,Q)

The RFM12U7X(TE12L,Q) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 4A 20W 20V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RFM12U7X(TE12L,Q), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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