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RFM08U9X(TE12L,Q)

RFM08U9X(TE12L,Q)

RFM08U9X(TE12L,Q)

Toshiba Semiconductor and Storage

RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 5A 20W 36V

SOT-23

RFM08U9X(TE12L,Q) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case TO-271AA
Supplier Device Package PW-X
PackagingCut Tape (CT)
Published 2009
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 36V
Current Rating (Amps) 5A
Max Power Dissipation20W
Current Rating5A
Frequency 520MHz
Current - Test 50mA
Drain to Source Voltage (Vdss) 36V
Transistor Type N-Channel
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 5V
Gain 11.7dB
Power - Output 7.5W
Voltage - Test 9.6V
RoHS StatusRoHS Compliant
In-Stock:4693 items

About RFM08U9X(TE12L,Q)

The RFM08U9X(TE12L,Q) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 5A 20W 36V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RFM08U9X(TE12L,Q), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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