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RFM03U3CT(TE12L)

RFM03U3CT(TE12L)

RFM03U3CT(TE12L)

Toshiba Semiconductor and Storage

MOSFET N-CH RF-CST3

SOT-23

RFM03U3CT(TE12L) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case 2-SMD, No Lead Exposed Pad
Supplier Device Package RF-CST3
PackagingCut Tape (CT)
Published 2009
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 16V
Current Rating (Amps) 3A
Max Power Dissipation7W
Current Rating3A
Frequency 520MHz
Current - Test 500mA
Drain to Source Voltage (Vdss) 16V
Transistor Type N-Channel
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 3V
Gain 14.8dB
Power - Output 3W
Voltage - Test 3.6V
RoHS StatusRoHS Compliant
In-Stock:3687 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.133680$5.13368
10$4.843094$48.43094
100$4.568957$456.8957
500$4.310337$2155.1685
1000$4.066355$4066.355

About RFM03U3CT(TE12L)

The RFM03U3CT(TE12L) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH RF-CST3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RFM03U3CT(TE12L), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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