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GT30J121(Q)

GT30J121(Q)

GT30J121(Q)

Toshiba Semiconductor and Storage

Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN

SOT-23

GT30J121(Q) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
PackagingTube
Published 2006
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Max Power Dissipation170W
Element ConfigurationSingle
Input Type Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 30A
Collector Emitter Breakdown Voltage600V
Test Condition 300V, 30A, 24 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 90ns/300ns
Switching Energy 1mJ (on), 800μJ (off)
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2971 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.162836$5.162836
10$4.870600$48.706
100$4.594906$459.4906
500$4.334817$2167.4085
1000$4.089450$4089.45

About GT30J121(Q)

The GT30J121(Q) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GT30J121(Q), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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