FGH40N60SFDTU Description
ON Semiconductor's FGH40N60SFDTU transistor is a single IGBT transistor. FGH40N60SFDTU's operational temperature is -55°C to 150°C TJ, and its maximum power dissipation is 290W. It comes packaged in the TO-247-3 format. ON Semiconductor's new Field Stop IGBTs use Novel Field Stop IGBT Technology to provide the best performance for automotive chargers, inverters, and other applications that require low conduction and switching losses.
FGH40N60SFDTU Features
? High Current Capability
? Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
? High Input Impedance
? Fast Switching
? Qualified to Automotive Requirements of AEC?Q101 (FGH40N60SFDTU?F085)
? These Devices are Pb?Free and are RoHS Compliant
FGH40N60SFDTU Applications
? Automotive Chargers, Converters, High Voltage Auxiliaries
? Inverters, PFC, UPS
