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3SK291(TE85L,F)

3SK291(TE85L,F)

3SK291(TE85L,F)

Toshiba Semiconductor and Storage

RF MOSFET Transistors N-Ch High Freq 30mA 0.15W 12.5V

SOT-23

3SK291(TE85L,F) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 52 Weeks
Package / Case SC-61AA
Surface MountYES
Number of Pins 4
PackagingCut Tape (CT)
Published 2009
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Powers
Max Power Dissipation150mW
Current Rating30mA
Frequency 800MHz
Operating Temperature (Max) 125°C
Configuration Single
Current - Test 10mA
Drain to Source Voltage (Vdss) 12.5V
Transistor Type N-Channel Dual Gate
Continuous Drain Current (ID) 30mA
Gain 22.5dB
Drain Current-Max (Abs) (ID) 0.03A
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure2.5dB
Voltage - Test 6V
RoHS StatusRoHS Compliant
In-Stock:4392 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.026400$10.0264
10$9.458868$94.58868
100$8.923460$892.346
500$8.418359$4209.1795
1000$7.941848$7941.848

About 3SK291(TE85L,F)

The 3SK291(TE85L,F) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors N-Ch High Freq 30mA 0.15W 12.5V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 3SK291(TE85L,F), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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