2SK2231(TE16R1,NQ) datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SK2231(TE16R1,NQ) Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Contact Plating
Silver, Tin
Mount
Surface Mount, Through Hole
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Supplier Device Package
PW-MOLD
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
5A
Number of Elements
1
Power Dissipation-Max
20W Tc
Element Configuration
Single
Power Dissipation
20W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
160mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
370pF @ 10V
Current - Continuous Drain (Id) @ 25°C
5A Ta
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Rise Time
55ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±20V
Fall Time (Typ)
65 ns
Turn-Off Delay Time
95 ns
Continuous Drain Current (ID)
5A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Input Capacitance
370pF
Drain to Source Resistance
160mOhm
Rds On Max
160 mΩ
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:2108 items
2SK2231(TE16R1,NQ) Product Details
2SK2231(TE16R1,NQ) Description
2SK2231(TE16R1,NQ) Features
No carrier storage effect; excellent switching and frequency characteristics
Durable and lacking in focus
Low driving power due to voltage regulation.
Simple parallel connection
2SK2231(TE16R1,NQ) Applications
Switching applications
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