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TSM80N08CZ C0G

TSM80N08CZ C0G

TSM80N08CZ C0G

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) N-Channel Tube 8m Ω @ 40A, 10V ±20V 3905pF @ 30V 91.5nC @ 10V 75V TO-220-3

SOT-23

TSM80N08CZ C0G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 113.6W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3905pF @ 30V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 91.5nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:3880 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.127415$5.127415
10$4.837184$48.37184
100$4.563381$456.3381
500$4.305077$2152.5385
1000$4.061392$4061.392

TSM80N08CZ C0G Product Details

TSM80N08CZ C0G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3905pF @ 30V is its maximum input capacitance.For this transistor to work, a voltage 75V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TSM80N08CZ C0G Features


a 75V drain to source voltage (Vdss)


TSM80N08CZ C0G Applications


There are a lot of Taiwan Semiconductor Corporation
TSM80N08CZ C0G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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