2SA1962-O(Q) Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.In the part, the transition frequency is 30MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
2SA1962-O(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz
2SA1962-O(Q) Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1962-O(Q) applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
