DZT651-13 Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 300mA, 3A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In the part, the transition frequency is 200MHz.Breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
DZT651-13 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
DZT651-13 Applications
There are a lot of Diodes Incorporated DZT651-13 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
