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1SS416(TL4,D)

1SS416(TL4,D)

1SS416(TL4,D)

Toshiba

SOT-23

1SS416(TL4,D) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Material Si
ECCN (US) EAR99
HTS 8541.10.00.70
Maximum DC Reverse Voltage (V) 30
Peak Reverse Repetitive Voltage (V) 35
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 1
Peak Forward Voltage (V) 0.5
Peak Reverse Current (uA) 50
Maximum Diode Capacitance (pF) 15(Typ)
Maximum Power Dissipation (mW) 100
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 100
Supplier Package fSC
Military No
Mounting Surface Mount
Package Height 0.48
Package Length 0.8
Package Width 0.6
PCB changed 2
Lead Shape Flat
Manufacturer Toshiba America Electronic Components
Part StatusObsolete
Type Small Signal Schottky Diode
Reach Compliance Code unknown
Pin Count2
Configuration Single
Repetitive Peak Reverse Voltage 35
RoHS StatusRoHS Compliant
In-Stock:1598 items

1SS416(TL4,D) Product Details

1SS416(TL4,D) Overview


Datasheets indicate 0.5 as the peak forward voltage.RF diode consumes about 0.1 continuous forward current at any given time.RF diode must be operated wRF diodeh a DC reverse voltage less than 30 V.

1SS416(TL4,D) Features


the forward peak voltage is 0.5


1SS416(TL4,D) Applications


There are a lot of Toshiba
1SS416(TL4,D) applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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