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HDBL107GHC1G

HDBL107GHC1G

HDBL107GHC1G

Taiwan Semiconductor

BRIDGE RECTIFIER DIODE SILICON DUAL Tube

SOT-23

HDBL107GHC1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Diode Element Material SILICON
Number of Terminals 4
ECCN (US) EAR99
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 1000
Peak Average Forward Current (A) 1
Peak RMS Reverse Voltage (V) 700
Peak Non-Repetitive Forward Surge Current (A) 50
Peak Forward Voltage (V) 1.7
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 75
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Supplier Package DBL
Military No
Mounting Through Hole
Package Height 2.6(Max)
Package Length 8.51(Max)
Package Width 6.5(Max)
PCB changed 4
Package Shape RECTANGULAR
Manufacturer Taiwan Semiconductor
PackagingTube
Part StatusActive
ECCN Code EAR99
Additional FeatureUL RECOGNIZED
Terminal Position DUAL
Terminal FormTHROUGH-HOLE
Reach Compliance Code compliant
Pin Count4
Reference Standard AEC-Q101
JESD-30 Code R-PDIP-T4
Number of Elements 4
Configuration Single
Diode Type BRIDGE RECTIFIER DIODE
Output Current-Max 1 A
Number of Phases 1
Rep Pk Reverse Voltage-Max 1000 V
Non-rep Pk Forward Current-Max 50 A
Breakdown Voltage-Min 1000 V
RoHS StatusYes with exemptions
In-Stock:3637 items

HDBL107GHC1G Product Details

HDBL107GHC1G Overview


Datasheets indicate 1.7 as the peak forward voltage.RF diode operates efficiently wRF diodeh a peak reverse voltage range of 700.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 1000 V.This device can measure a maximum output voltage of 1 A.

HDBL107GHC1G Features


the forward peak voltage is 1.7
the peak RMS reverse voltage range of 700
at its lowest breakdown voltage of 1000 V
a maximum output current voltage of 1 A


HDBL107GHC1G Applications


There are a lot of Taiwan Semiconductor
HDBL107GHC1G applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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