FDS89141 Description
The N-channel MOSFET is produced using an advanced Power Tritch process optimized for RDS (conduction), switching performance and ruggedness.
FDS89141 Features
Shielded Gate MOSFET Technology
Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A
Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A
High Performance Trench Technology for Extremely Low rDS(on)
High Power and Current Handling Capability in a Widely Used Surface Mount Package
100% UIL Tested
RoHS Compliant
FDS89141 Applications
This product is general usage and suitable for many different applications.
Synchronous Rectifier
Primary Switch for Bridge Topology
