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CSD85312Q3E

CSD85312Q3E

CSD85312Q3E

Texas Instruments

CSD85312Q3E datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website

SOT-23

CSD85312Q3E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact PlatingGold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation2.5W
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD85312
Number of Elements 2
Configuration COMPLEX
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Turn On Delay Time11 ns
FET Type 2 N-Channel (Dual) Common Source
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.4m Ω @ 10A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 4.5V
Rise Time27ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 76A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 5V Drive
Feedback Cap-Max (Crss) 40 pF
Length 3.3mm
Width 3.3mm
Thickness 900μm
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:5070 items

Pricing & Ordering

QuantityUnit PriceExt. Price

CSD85312Q3E Product Details

CSD85312Q3E Description


A dual N-channel, 20 V common-source device for adapter or USB input protection is the CSD85312Q3E. For multi-cell battery charging applications where space is at a premium, this SON 3.3 x 3.3 mm device's low drain to drain on-resistanee lowers losses and delivers reduced component count.



CSD85312Q3E Features


?Connectivity via a Common Source


?Low Drain to Drain-On Resistance


?SON 3.3 x 3.3 mm Space-Saving Plastic Package


?Performs best with a 5 V Gate Drive


?High Thermal Conductivity


?Rated for Avalanches


?Terminal plating without pb


? RoHS conformant


?Free of Halogen



CSD85312Q3E Applications


USB input protection for tablets and notebook computers


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