Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NTMD3P03R2G

NTMD3P03R2G

NTMD3P03R2G

ON Semiconductor

NTMD3P03R2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTMD3P03R2G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 85MOhm
Additional FeatureAVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation2W
Terminal FormGULL WING
Current Rating-3.05A
Base Part Number NTMD3P03
Pin Count8
Number of Elements 2
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time16 ns
Power - Max 730mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 24V
Current - Continuous Drain (Id) @ 25°C 2.34A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time16ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -3.05A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.7 V
Feedback Cap-Max (Crss) 135 pF
Height 1.5mm
Length 5mm
Width 4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6963 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.548680$2.54868
10$2.404415$24.04415
100$2.268316$226.8316
500$2.139921$1069.9605
1000$2.018793$2018.793

NTMD3P03R2G Product Details

NTMD3P03R2G Description


P-channel MOSFET is a type of MOSFET, in which the channel of MOSFET consists of most of the holes as current carriers. When the MOSFET is activated and turned on, most of the current flowing through the channel is a hole.


NTMD3P03R2G Features


? High Efficiency Components in a Dual SOIC?8 Package

? High Density Power MOSFET with Low RDS(on)

? Miniature SOIC?8 Surface Mount Package ? Saves Board Space

? Diode Exhibits High Speed with Soft Recovery

? IDSS Specified at Elevated Temperature

? Avalanche Energy Specified

? Mounting Information for the SOIC?8 Package is Provided

? AEC?Q101 Qualified ? NVMD3P03R2G

? These Devices are Pb?Free and are RoHS Compliant


NTMD3P03R2G Applications


? DC?DC Converters

? Low Voltage Motor Control

? Power Management in Portable and Battery?Powered Products, i.e.:

Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones

Get Subscriber

Enter Your Email Address, Get the Latest News