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CSD85301Q2

CSD85301Q2

CSD85301Q2

Texas Instruments

CSD85301Q2 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website

SOT-23

CSD85301Q2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Weight 9.695537mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Max Power Dissipation2.3W
Terminal FormNO LEAD
Base Part Number CSD85301
Number of Elements 2
Number of Channels 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 469pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Rise Time26ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.039Ohm
Avalanche Energy Rating (Eas) 3.8 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 5V Drive
Height 800μm
Length 2mm
Width 2mm
Thickness 750μm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10945 items

Pricing & Ordering

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CSD85301Q2 Product Details

CSD85301Q2 Description

The CSD8530102 is a 20V23mQ N-Channe device in SON2X2 mm plastic package and dual independent MOSFET. The two FET are designed as half-bridge structures for synchronous buck and other power applications. In addition, the device can be used in adapters, USB input protection and battery charging applications. The dual field effect transistor has a low drain-to-source turn-on resistance that minimizes loss and loss.

There are fewer parts with limited space.

CSD85301Q2 Features


Low On-Resistance

Dual Independent MOSFETs

Space Saving SON2x2 mm Plastic Package
Optimized for 5 V Gate Driver

Avalanche Rated

Pb and Halogen Free

RoHS Compliant

CSD85301Q2 Applications

Point-of-Load Synchronous Buck Converter for Applications in NetworkingTelecom.and Computing Systems

Adaptor or USB Input Protection for Notebook PCs and Tablets

Battery Protection




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