FDME1023PZT Description
The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved.The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.
FDME1023PZT Features
Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
Max rDS(on)= 331 mΩ at VGS = -1.8 V, ID = -1.5 A
Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600V (Note3)
RoHS Compliant
FDME1023PZT Applications
This product is general usage and suitable for many different applications.