Name: CSD25481F4
Brand: Texas Instruments
SKU: CSD25481F4
Price: 0.50000 USD
Availability: InStock

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CSD25481F4

Manufacturer part number:CSD25481F4

Manufacturer:Texas Instruments

Description:CSD25481F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD25481F4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD25481
Number of Elements	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	-0.95
Power Dissipation	500mW
Turn On Delay Time	4.1 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	88m Ω @ 500mA, 8V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	189pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	0.913nC @ 4.5V
Rise Time	3.6ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Fall Time (Typ)	6.7 ns
Turn-Off Delay Time	16.9 ns
Continuous Drain Current (ID)	2.5A
Gate to Source Voltage (Vgs)	-12V
Drain to Source Breakdown Voltage	-20V
Height	350μm
Length	1.035mm
Width	635μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

CSD25481F4 Product Details

CSD25481F4 Description

CSD25481F4 is a kind of 90-mΩ, 20-V P-Channel FemtoFET? MOSFET providing ultralow on-state resistance and ultralow Qg and Qgd. Based on innovative technology, it is developed and optimized to minimize the footprint in many handheld and mobile applications. It provides an alternative to standard small signal MOSFETs.