PSMN2R0-30YL,115 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 151 mJ.The maximum input capacitance of this device is 3980pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.There is no pulsed drain current maximum for this device based on its rated peak drain current 667A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
PSMN2R0-30YL,115 Features
the avalanche energy rating (Eas) is 151 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 667A.
a 30V drain to source voltage (Vdss)
PSMN2R0-30YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN2R0-30YL,115 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
