Name: CSD23382F4
Brand: Texas Instruments
SKU: CSD23382F4
Price: 0.51000 USD
Availability: InStock

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CSD23382F4

Manufacturer part number:CSD23382F4

Manufacturer:Texas Instruments

Description:CSD23382F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD23382F4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	FemtoFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD23382
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	28 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	76m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	235pF @ 6V
Current - Continuous Drain (Id) @ 25°C	3.5A Ta
Gate Charge (Qg) (Max) @ Vgs	1.35nC @ 6V
Rise Time	25ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	66 ns
Continuous Drain Current (ID)	3.5A
Gate to Source Voltage (Vgs)	8V
Length	1.035mm
Width	635μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

CSD23382F4 Product Details

CSD23382F4 Description

CSD23382F4 is a kind of 66-mΩ, 12-V P-Channel FemtoFET? MOSFET providing ultralow on-state resistance and ultralow Qg and Qgd. Based on innovative technology, it is developed and optimized to minimize the footprint in many handheld and mobile applications. It provides an alternative to standard small signal MOSFETs.