Name: AUIRF3205
Brand: Infineon Technologies
SKU: AUIRF3205
Price: 4.36000 USD
Availability: InStock

new-10%

AUIRF3205

Manufacturer part number:AUIRF3205

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 8m Ω @ 62A, 10V ±20V 3247pF @ 25V 146nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:AUIRF3205 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	HEXFET®
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Power Dissipation	200W
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8m Ω @ 62A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3247pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	146nC @ 10V
Rise Time	101ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	75A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Height	9.02mm
Length	10.67mm
Width	4.83mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

AUIRF3205 Product Details

AUIRF3205 Description

This Stripe Planar design of HEXFET? Power MOSFETs, specifically created for Automotive applications, makes use of cutting-edge processing processes to provide low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.