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CSD19536KTT

CSD19536KTT

CSD19536KTT

Texas Instruments

CSD19536KTT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD19536KTT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 2
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19536
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation375W
Case Connection DRAIN
Turn On Delay Time13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 200A Ta
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Rise Time8ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0028Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 806 mJ
Max Junction Temperature (Tj) 175°C
Height 4.83mm
Length 10.18mm
Width 8.41mm
Thickness 4.44mm
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:1239 items

Pricing & Ordering

QuantityUnit PriceExt. Price
500$2.89504$1447.52

CSD19536KTT Product Details

Description


The CSD19536KTT is a NexFETTM Power MOSFET with a 100-V N-Channel. This NexFETTM power MOSFET with a 100-V, 2-m, D2PAK (TO-263) is designed to reduce losses in power conversion applications. MOSFET stands for metal oxide semiconductor field-effect transistor, and it is a form of MOSFET that is used to switch enormous amounts of current. The source and drain terminals are on opposing sides of the chip in power MOSFETs, which have a vertical configuration. The vertical design reduces gate crowding and allows for wider channel widths.



Features


? Lead-Free Terminal Plating

? RoHS Compliant

? Halogen Free

? D2PAK Plastic Package

? Ultra-Low Qg and Qgd

? Low Thermal Resistance

? Avalanche Rated



Applications


? Secondary Side Synchronous Rectifier

? Hot Swap

? Motor Control

? Power Semiconductor Device

? Automotive Industry


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