CSD19534Q5AT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
SOT-23
CSD19534Q5AT Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
24.012046mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
CSD19534
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.2W Ta 63W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.2W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
15.1m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
3.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1680pF @ 50V
Current - Continuous Drain (Id) @ 25°C
50A Ta
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V
Rise Time
14ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
44A
Threshold Voltage
2.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Avalanche Energy Rating (Eas)
55 mJ
Max Junction Temperature (Tj)
150°C
Feedback Cap-Max (Crss)
7.4 pF
Height
1.1mm
Length
4.9mm
Width
6mm
Thickness
1mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:3805 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
250
$0.70620
$176.55
500
$0.62596
$312.98
750
$0.54892
$411.69
CSD19534Q5AT Product Details
CSD19534Q5AT Description
The CSD19534Q5AT is a NexFET? N-channel Power MOSFET designed to minimize losses in power conversion applications. The MOSFET CSD19534Q5AT is suitable for use in primary side telecom applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET CSD19534Q5AT is in the VSONP-8 package with 63W power dissipation.
CSD19534Q5AT Features
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm × 6 mm Plastic Package
CSD19534Q5AT Applications
Power Management
Motor Drive & Control
Communications & Networking
Industrial
Primary Side Telecom
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