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IRLR120PBF

IRLR120PBF

IRLR120PBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 270mOhm @ 4.6A, 5V ±10V 490pF @ 25V 12nC @ 5V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

IRLR120PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Weight 1.437803g
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2015
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 42W Tc
Element ConfigurationSingle
Power Dissipation2.5W
Turn On Delay Time9.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.7A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Rise Time64ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 7.7A
Gate to Source Voltage (Vgs) 10V
Input Capacitance490pF
Drain to Source Resistance 270mOhm
Rds On Max 270 mΩ
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3959 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.49000$1.49
75$1.19107$89.33025
150$1.04213$156.3195
525$0.80821$424.31025

IRLR120PBF Product Details

IRLR120PBF Overview


A device's maximal input capacitance is 490pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 270mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).

IRLR120PBF Features


a continuous drain current (ID) of 7.7A
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)


IRLR120PBF Applications


There are a lot of Vishay Siliconix
IRLR120PBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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