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CSD19532KTT

CSD19532KTT

CSD19532KTT

Texas Instruments

CSD19532KTT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD19532KTT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 2
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19532
Number of Elements 1
Power Dissipation-Max 250W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.6m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5060pF @ 50V
Current - Continuous Drain (Id) @ 25°C 200A Ta
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Rise Time3ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0066Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 259 mJ
Feedback Cap-Max (Crss) 18 pF
Height 4.83mm
Length 10.18mm
Width 8.41mm
Thickness 4.44mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4144 items

Pricing & Ordering

QuantityUnit PriceExt. Price
500$1.40176$700.88

CSD19532KTT Product Details

CSD19532KTT Description


CSD19532KTT is a type of 100 V, 4.6 mΩ, N-channel NexFET? power MOSFET that is specifically designed to minimize losses in power conversion applications. It is capable of providing ultra-low Qg and Qgd, as well as low thermal resistance. This power MOSFET is well suited for secondary-side synchronous rectifier, hot-swap, and motor control.



CSD19532KTT Features


  • Low thermal resistance

  • Ultra-low Qg and Qgd

  • Avalanche rated

  • Available in the D2PAK plastic package



CSD19532KTT Applications


  • Hot swap

  • Motor control

  • Secondary side synchronous rectifier


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