FQP11N40 Description
This N-channel enhanced power MOSFET is produced using Fairchild's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
FQP11N40 Features
? 10.5 A, 400 V, RDS(on) = 530 m? (Max.) @ VGS = 10 V,
ID = 5.25 A
? Low Gate Charge (Typ. 28 nC)
? Low Crss (Typ. 85 pF)
? 100% Avalanche Tested
FQP11N40 Applications
switching mode power supplies
active power factor correction (PFC)
electronic lamp ballasts
