CSD16327Q3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
SOT-23
CSD16327Q3 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
CSD16327
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.8W
Case Connection
DRAIN
Turn On Delay Time
5.3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 24A, 8V
Vgs(th) (Max) @ Id
1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
8.4nC @ 4.5V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
3V 8V
Vgs (Max)
+10V, -8V
Fall Time (Typ)
6.3 ns
Turn-Off Delay Time
13 ns
Continuous Drain Current (ID)
22A
Threshold Voltage
1.2V
Gate to Source Voltage (Vgs)
10V
Drain Current-Max (Abs) (ID)
60A
Drain-source On Resistance-Max
0.0065Ohm
Drain to Source Breakdown Voltage
25V
Max Junction Temperature (Tj)
150°C
Feedback Cap-Max (Crss)
65 pF
Height
1.1mm
Length
3.3mm
Width
3.3mm
Thickness
1mm
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:7317 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
CSD16327Q3 Product Details
CSD16327Q3 Description
CSD16327Q3 is a type of N-channel NexFET? power MOSFET developed based on the established NexFET? technology. It is specially designed to minimize losses in power conversion and optimized for 5V gate drive applications. It is available in the SON package for space-saving. CSD16327Q3 is optimized for control or synchronous FET applications
CSD16327Q3 Features
NexFET? technology
Optimized for 5-V gate drive
Ultralow Qg and Qgd
Low thermal resistance
Available in the SON package
CSD16327Q3 Applications
Point-of-load synchronous buck converter for applications in networking, telecom, and computing systems
Optimized for control or synchronous FET applications
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