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BUK9M52-40EX

BUK9M52-40EX

BUK9M52-40EX

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 40m Ω @ 5A, 10V ±10V 407pF @ 25V 4.5nC @ 5V 40V SOT-1210, 8-LFPAK33

SOT-23

BUK9M52-40EX Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2016
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 31W
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 407pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17.6A
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Drain Current-Max (Abs) (ID) 17.6A
Drain-source On Resistance-Max 0.052Ohm
Pulsed Drain Current-Max (IDM) 70A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 4.98 mJ
RoHS StatusROHS3 Compliant
In-Stock:13606 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BUK9M52-40EX Product Details

BUK9M52-40EX Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4.98 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 407pF @ 25V.17.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 70A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 40V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (5V 10V) reduces this device's overall power consumption.

BUK9M52-40EX Features


the avalanche energy rating (Eas) is 4.98 mJ
based on its rated peak drain current 70A.
a 40V drain to source voltage (Vdss)


BUK9M52-40EX Applications


There are a lot of Nexperia USA Inc.
BUK9M52-40EX applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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