Name: BS108,126
Brand: NXP USA Inc.
SKU: BS108,126
Availability: InStock

new-10%

BS108,126

Manufacturer part number:BS108,126

Manufacturer:NXP USA Inc.

Description:MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5 Ω @ 100mA, 2.8V ±20V 120pF @ 25V 200V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Case Package:SOT-23

Datasheet:BS108,126 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Box (TB)
Published	2001
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	O-PBCY-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 100mA, 2.8V
Vgs(th) (Max) @ Id	1.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300mA Ta
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	2.8V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	0.3A
Drain-source On Resistance-Max	5Ohm
DS Breakdown Voltage-Min	200V
Feedback Cap-Max (Crss)	15 pF
RoHS Status	ROHS3 Compliant

BS108,126 Product Details

BS108,126 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.0.3A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (2.8V) reduces this device's overall power consumption.