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TSM10N60CZ C0G

TSM10N60CZ C0G

TSM10N60CZ C0G

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL

SOT-23

TSM10N60CZ C0G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~150°C TJ
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 166W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 750m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1738pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 45.8nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusROHS3 Compliant
In-Stock:1766 items

About TSM10N60CZ C0G

The TSM10N60CZ C0G from Taiwan Semiconductor Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CHANNEL.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TSM10N60CZ C0G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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