Name: IRF3808STRRPBF
Brand: Infineon Technologies
SKU: IRF3808STRRPBF
Availability: InStock

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IRF3808STRRPBF

Manufacturer part number:IRF3808STRRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 75V 106A D2PAK

Case Package:SOT-23

Datasheet:IRF3808STRRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7m Ω @ 82A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5310pF @ 25V
Current - Continuous Drain (Id) @ 25°C	106A Tc
Gate Charge (Qg) (Max) @ Vgs	220nC @ 10V
Rise Time	140ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	106A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	75A
Drain-source On Resistance-Max	0.007Ohm
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	550A
Height	4.826mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

About IRF3808STRRPBF

The IRF3808STRRPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 75V 106A D2PAK.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF3808STRRPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.