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TSC5304EDCP ROG

TSC5304EDCP ROG

TSC5304EDCP ROG

Taiwan Semiconductor Corporation

TSC5304EDCP ROG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

TSC5304EDCP ROG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak)
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2010
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Power - Max 35W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 17 @ 1A 5V
Current - Collector Cutoff (Max) 250μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 2.5A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 4A
RoHS StatusROHS3 Compliant
In-Stock:1369 items

Pricing & Ordering

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TSC5304EDCP ROG Product Details

TSC5304EDCP ROG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 17 @ 1A 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Product comes in TO-252, (D-Pak) supplier package.The device has a 400V maximal voltage - Collector Emitter Breakdown.

TSC5304EDCP ROG Features


the DC current gain for this device is 17 @ 1A 5V
the vce saturation(Max) is 1.5V @ 500mA, 2.5A
the supplier device package of TO-252, (D-Pak)

TSC5304EDCP ROG Applications


There are a lot of Taiwan Semiconductor Corporation TSC5304EDCP ROG applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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