KST55MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 1V DC current gain.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.With the emitter base voltage set at -4V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Breakdown input voltage is 60V volts.Maximum collector currents can be below 500mA volts.
KST55MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KST55MTF Applications
There are a lot of ON Semiconductor KST55MTF applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
